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The growth of pepped-up determining demand of final consumers always forces devices and circuits to increase power and speed. Only resonant tunneling diode can solve this problem and can be able to take a vital role in many nanoscale applications. This research paper demonstrates the simulations of the Resonant Tunneling Diode (RTD) by using Hartree Model for the single barrier (1B) and the double barrier (2B) Resonant Tunneling Diodes by the using of NEMO5 considering NEGF. In addition, switching applications also require a Large Peak to Valley Voltage Ratio (PVVR) to reduce energy loss. In this article, it has been clearly explained that compared to the Thomas Fermi Model, Hartree Model improves the Peak to Voltage Valley Ratio (PVVR) by 21.21%. The results of the Double Barrier RTD showed much better performance than the Single Barrier RTD. Furthermore, the I-V characteristic verified the notable improvement for the Hartree model.
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 S. Datta, “Non-Equilibrium Green’s Function (NEGF) Formalism: An elementary Introduction,” Proceedings of the International Electron Devices Meeting (IEDM), IEEE Press (2002).
 S. Datta, “Nanoscale Device Simulation: The Green’s Function Method,” Superlattices and Microstructures, 28, 253-278 (2000).
 S. Datta, “Electrical resistance: an atomic view,” Nanotechnology, 15, S433-S451(2004).
 M. P. Anantram, M. S. Lundstrom and D. E. Nikonov, “Modeling of Nanoscasle Devices,” http://arxiv.org/abs/cond-mat/0610247v2 (2007).
 M. Paulsson, “Non-Equilibrium Green’s Functions for Dummies: Introduction to the One Particle NEGF equations,” arxiv.org cond-mat/0210519 (2002).
 E. Polizzi, and S. Datta, “Multidimensional Nanoscale device modeling: Finite Element Method applied to the Non-Equilibrium Green’s Function formalism,” IEEENANO 2003. Third IEEE Conference on Nanotechnology, 2, 40-43 (2003).
 A. P. Jauho, “Introduction to the Keldysh nonequilibrium Green function technique,”
 N. Mingo and Y. Liu, “Phonon Transport in Amorphous-Coated Nanowires: Atomistic Green Function Approach,” Phys. Rev. B, 70, 249901, 2004.
 Arpan Deyasi, Gourab Kumar Ghosh, “Effect of Dimention & Material Composition on Transmission Coefficient and Tunneling Current of Double Quantum Barrier Structure with Band Nonparabolicity”, Bonfring International Journal of Power Systems and Integrated Circuits, Vol. 2, No. 3, December 2012.
[11 ]J.N. Schulman, H. J. De Los Santos, D.H.Chow, “Physics-Based RTD Current-Voltage Equation”,IEEE ELECTRON DEVICE LETTERS, VOL.17, NO.5, MAY 1996.
 Vivek Sharma, Raminder Preetpal Singh, “Nano Scale Simulation of GaAs based Resonant Tunneling Diode” IJECS Vol.2 Issue 12, page no.3580-3583, December,2013.
 Johnny Ling, “Resonant Tunneling Diodes: Theory of Operation and Applications”, page no.14627-14629,
 Madhukar Reddy, “Schottky-collector Resonant Tunnel Diodes for Sub-Millimeter-Wave Applications January”8,p6,1997
 R. Kosik, “Resonant Tunneling Diode Structure” http://www.iue.tuwien.ac.at/phd/kosik/node64.html
 P.Mazumder, S.Kulkarni, M. Bhattacharya, J.Ping Sun, and G.I. Haddad, “Digital Circuit Applications of Resonant Tunneling Divices”Proceeding of the IEEE, vol.86, no. 4, April 1998.
 A.Deyasi, S.Bhattacharyya,“Composite Effect of BenDaniel Duke Boundary Condition and Material Composition on Eigenenergy of Multiple Quantum Well Structure”,International Journal of Soft Computing and Engineering(IJSCE) ISSN:2231-2307, Vol-1,Issue-4, September 2011.
 Charles E,. Chang, Peter M. Asbeck, Keh-Chung Wang, Elliott R. Brown, “Analysis of Heterojunction Bipolar Transistor/Resonant Tunneling Diode Logic for Low-Power and High-speed Digital Applications” IEEE Transactions on Electron Devices. Vol. 40. No. 4. April 1993, page 685-690.
 R. Tsu, L. Esaki, “Tunneling in a finite superlattice” Appl. Physics Letters, Vol. 22, pp. 562-564 (1973).
 Jian Ping Sun, George I. Haddad, Pinaki Mazumder, and Joel N. Schulman, “Resonant Tunneling Diodes: Models and Properties,” Proceedings of the IEEE, vol. 86, p.641, April 1998.
 R. C. Bowen, G. Klimeck, R. Lake, W. R. Frensley and T. Moise, “Quantitative Simulation of a Resonant Tunneling Diode,” Journal of Applied Physiss, vol. 81, no.7,1996.
 Yan Z X, Deen M J. “New RTD large-signal DC model suitable for PSPICE[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems”, 14(2):167-172,1995.
 D.K. Ferry, S.M. Goodnick “Transport in nanostructures” Cambridge studies in semiconductors physics and microelectronics engineering 2005.
 D. H. Chow, J.N.Schulman, E. Ozbay, and D.M. Bloom,“1.7-ps, microwave integrated-circuit-compatible InAs/AlSb resonant tunneling diode,” Appl. Phys. Lett., vol.61, pp.1685-1687,1992(see Table I)
 Jian Ping Sun, P. Mazumder,Joel N schulman, “Resonant Tunneling Diodes: Models and Properties”, IEEE Xplore May 1998.