Comparative Study of Single and Double Barrier GaAs/Al0.3Ga0.7As Based Resonant Tunneling Diodes Considering NEGF

Authors

  • Mr. Mehedi Hasan American International University-Bangladesh (AIUB)
  • M. Tanseer Ali American International University-Bangladesh (AIUB)
  • Md. Kamrul Hasan American International University-Bangladesh (AIUB)
  • Shaira Tashnub Torsa American International University-Bangladesh(AIUB)
  • Mahfujur Rahman American International University-Bangladesh (AIUB)

DOI:

https://doi.org/10.53799/ajse.v21i3.507

Keywords:

Resonant Tunneling Diodes, Hartree model NEGF, Lorentzian approximation NEMO5, PDR1, PDR2, NDR, Quantum Sheet Charge Density, Resonance Energy, Electron Effective Mass Model

Abstract

The growth of pepped-up determining demand of final consumers always forces devices and circuits to increase power and speed. Only resonant tunneling diode can solve this problem and can be able to take a vital role in many nanoscale applications. This research paper demonstrates the simulations of the Resonant Tunneling Diode (RTD) by using Hartree Model for the single barrier (1B) and the double barrier (2B) Resonant Tunneling Diodes by the using of NEMO5 considering NEGF. In addition, switching applications also require a Large Peak to Valley Voltage Ratio (PVVR) to reduce energy loss. In this article, it has been clearly explained that compared to the Thomas Fermi Model, Hartree Model improves the Peak to Voltage Valley Ratio (PVVR) by 21.21%. The results of the Double Barrier RTD showed much better performance than the Single Barrier RTD. Furthermore, the I-V characteristic verified the notable improvement for the Hartree model.

Downloads

Published

31-12-2022

Issue

Vol. 21 No. 3 (2022): AJSE Volume 21 Issue 3

Section

Articles

License

AJSE contents are under the terms of the Creative Commons Attribution License. This permits anyone to copy, distribute, transmit and adapt the work non-commercially provided the original work and source is appropriately cited.

How to Cite

[1]
“Comparative Study of Single and Double Barrier GaAs/Al0.3Ga0.7As Based Resonant Tunneling Diodes Considering NEGF”, AJSE, vol. 21, no. 3, pp. 176–184, Dec. 2022, doi: 10.53799/ajse.v21i3.507.

Most read articles by the same author(s)