Effect of Oxide Thickness on GaN-based Double Gate MOSFETs

Abstract

The effect of oxide thickness (EOT) on GaNbased double gate (DG) MOSFETs have been explored for low
power switching device. The gate length (LG) of 8 nm with 4 nm
underlap is considered. The device is turned off and on for gate
voltage (VGS) of 0 V and 1 V, respectively. The effective oxide
thickness (EOT) is varied from 1 nm to 0.5 nm and the device
performance is evaluated. For EOT = 0.5 nm, the OFF-state
current (IOFF), subthreshold slope (SS) and drain induced
barrier lowering (DIBL) are obtained 2.97×10-8 A/µm, 69.67
mV/dec and 21.753 mV/V, respectively. These results indicate
that, it is possible to minimize short channel effects (SCEs) by
using smaller value of EOT.