Exploring Silicon Nitride Gate Materials for Enhanced Performance of Silicon-Based MOSFET

Abstract

This research paper investigates the potential of
silicon nitride gate materials for enhancing the performance of
silicon- based Metal-Oxide -Semiconductor Field-Effect
Transistors (MOSFETs). Through simulations conducted using
COMSOL Multiphysics, we analyzed the impact of using silicon
nitride gate materials on MOSFET performance. Our results
demonstrate that silicon nitride gate materials offer improved
device characteristics, including reduced gate leakage currents,
enhanced carrier mobility, and reduced threshold voltage
variability. These findings underscore the potential of silicon
nitride as a key material for advancing the performance of
MOSFETs, paving the way for more efficient and reliable
semiconductor devices in the future.