Projected Performance of an InxGa1-xAs Quantum Dot Intermediate Band Solar Cell

Authors

  • Sayeda Anika Amin
  • Md. Tanvir Hasan

DOI:

https://doi.org/10.53799/ajse.v16i1.31

Keywords:

Quantum dot, Intermediate band, InGaAs

Abstract

Quantum Dot Intermediate Band Solar Cell (QDIBSC) is one of the emerging technologies in the solar photovoltaic arena, which has immense potential to be demonstrated as a high efficiency device. For a QDIBSC to surpass the efficiency of a single junction cell, optimization of design is required. In this work, a QDIBSC model based on In0.53Ga0.47As quantum dots has been designed and evaluated with respect to dot size and spacing. The impact of carrier lifetime on short-circuit current and open-circuit voltage is studied. The conversion efficiency has been enhanced from 27.1% to 32.62% as compared to a conventional single junction cell.

Downloads

Published

03/31/2017

Issue

Vol. 16 No. 1 (2017): AJSE Volume: 16 Issue: 1 (2017)

Section

Articles

License

AJSE contents are under the terms of the Creative Commons Attribution License. This permits anyone to copy, distribute, transmit and adapt the work non-commercially provided the original work and source is appropriately cited.

How to Cite

[1]
“Projected Performance of an InxGa1-xAs Quantum Dot Intermediate Band Solar Cell”, AJSE, vol. 16, no. 1, pp. 47–52, Mar. 2017, doi: 10.53799/ajse.v16i1.31.

Most read articles by the same author(s)