Temperature Characteristics of NanoDimensional FinFET with P Type GaP Semiconductor Channel Based on ION/IOFF and Subthreshold Swing (SS)
Abstract
This study explores the effect of operating
temperature on the performance of GaP-FinFET structures. The
Multi-Gate Field Effect Transistors (MuGFET) simulation tool
was employed to analyze the electrical characteristics of FinFETs
across a temperature range of 0 °C to 125 °C. A P-channel GaPFinFET with constant channel fin parameters was simulated to
investigate its current-voltage behavior under varying thermal
conditions. The findings reveal a significant variation in current
(ΔI) within the gate voltage range of -0.7 V to -1 V,
demonstrating the potential of P-channel GaP-FinFETs as
nanoscale temperature sensors. The highest ΔI and temperature
sensitivity were observed at Vg = -1 V. However, increasing the
operating temperature led to degradation in subthreshold swing
(SS) and the ION/IOFF ratio, indicating a trade-off between
sensitivity and device performance
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2025 AIUB Journal of Science and Engineering (AJSE)
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
AJSE contents are under the terms of the Creative Commons Attribution License. This permits anyone to copy, distribute, transmit and adapt the work non-commercially provided the original work and source is appropriately cited.
