Projected Performance of an InxGa1-xAs Quantum Dot Intermediate Band Solar Cell

Authors

  • Sayeda Anika Amin
  • Md. Tanvir Hasan

DOI:

https://doi.org/10.53799/ajse.v16i1.185

Abstract

Quantum Dot Intermediate Band Solar Cell
(QDIBSC) is one of the emerging technologies in the solar
photovoltaic arena, which has immense potential to be
demonstrated as a high efficiency device. For a QDIBSC to
surpass the efficiency of a single junction cell, optimization of
design is required. In this work, a QDIBSC model based on
In0.53Ga0.47As quantum dots has been designed and evaluated
with respect to dot size and spacing. The impact of carrier
lifetime on short-circuit current and open-circuit voltage is
studied. The conversion efficiency has been enhanced from
27.1% to 32.62% as compared to a conventional single junction
cell.

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Published

2017-03-31

How to Cite

Amin, S. A., & Hasan, M. T. (2017). Projected Performance of an InxGa1-xAs Quantum Dot Intermediate Band Solar Cell . AIUB Journal of Science and Engineering (AJSE), 16(1), 6. https://doi.org/10.53799/ajse.v16i1.185

Issue

Vol. 16 No. 1 (2017): AJSE Volume: 16 Issue: 1 (2017)

Section

Articles

License

Copyright (c) 2026 AIUB Journal of Science and Engineering (AJSE)

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