Optimized High Performance Characteristics of a designed 450 nm InGaN/AlGaN True Blue Laser Considering Different Injection Current
DOI:
https://doi.org/10.53799/ajse.v16i2.175Abstract
In this work, the effects on the performance
characteristics of a In0.1558Ga0.8442N / Al0.0416Ga0.9584N 3QW
separate confinement heterostrcture 450 nm true blue edge
emitting laser are presented by considering different injection
current. At the temperature of 300 K, the threshold current of
the laser is 11 mA. The peak material gain for the designed laser
is obtained as 1106 cm-1 and further used for the analysis of the
performance characteristics of the designed double
heterostructure laser for the variation of injection current. The
injection current can be applied to the device is at around 12 to
15 times of the threshold current. At the value of injection
current 152 mA, the maximum output power of the laser is 256.4
mW, the maximum resonance frequency is 14.5 GHz and the
corresponding modulation bandwidth is 25.3 GHz at the
temperature of 300 K.
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