Design and Analysis of Logic Gates using GaN based Double Gate MOSFET (DG-MOS)

Abstract

The double gate MOSFET, where two gates are
fabricated along the length of the channel one after another.
Design of logic gates is one of the most eminent application of
Double Gate MOSFET. Gallium nitride (GaN) based metal-oxide
semiconductor field-effect transistors (MOSFETs) are shown to be
promising for digital logic applications. This paper describes the
design and analysis of different types of logic gates using GaN
based DG-MOSFET. The gate length (LG) is kept constant at 10.6
nm. The gate voltage varies from 0 to 1 V for the device switching
from turn OFF to turn ON-state. For the device with HfO2 as gate
oxide, the ON-state current (ION) and OFF-state current (IOFF) are
found 8.11×10-3 and 6.38605×10-9A/µm respectively. The leakage
current is low for the device with HfO2 as compared to that for the
device with ZrO2. The subthreshold swing (SS) is 68.7408 mV/dec
for the device with HfO2.