Exploring Silicon Nitride Gate Materials for Enhanced Performance of Silicon-Based MOSFET
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Abstract
This research paper investigates the potential of silicon nitride gate materials for enhancing the performance of silicon- based Metal-Oxide -Semiconductor Field-Effect Transistors (MOSFETs). Through simulations conducted using COMSOL Multiphysics, we analyzed the impact of using silicon nitride gate materials on MOSFET performance. Our results demonstrate that silicon nitride gate materials offer improved device characteristics, including reduced gate leakage currents, enhanced carrier mobility, and reduced threshold voltage variability. These findings underscore the potential of silicon nitride as a key material for advancing the performance of MOSFETs, paving the way for more efficient and reliable semiconductor devices in the future.
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How to Cite
[1]
H. M. Bijoy, “Exploring Silicon Nitride Gate Materials for Enhanced Performance of Silicon-Based MOSFET”, AJSE, vol. 23, no. 3, pp. 238 - 247, Dec. 2024.
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References
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[19] K. S. Park et al., “Improved performance of Silicon-based MOSFETs with Silicon Nitride gate materials,” Journal of Applied Physics, vol. 120, no. 3, Nov 2016
[20] M. Chen et al., “Simulation study on the impact of gate materials on Silicon MOSFET performance,” IEEE Transactions on Electron Devices, vol. 65, no. 7, Aug 2018.
[21] Y. Yorozu, M. Hirano, K. Oka, and Y. Tagawa, “Electron spectroscopy studies on magneto-optical media and plastic substrate interface,” IEEE Transl. J. Magn. Japan, vol. 2, pp. 740–741, August 1987.
[22] M. Young, The Technical Writer’s Handbook. Mill Valley, CA: University Science, 1989.
[23] Sun, Zhongheng, “Comparison and analysis of gate dielectrics for SiC MOSFET”. Applied and Computational Engineering. 23. 223-229. 10.54254/2755-2721/23/20230659, Nov 2023.
[24] Dayal, A., Pandey, S.P., Khandelwal, S. and Akashe, S., “June. Multiple-gate silicon on insulator (SOI) MOSFETs: Device design and analysis”, International Conference on Microelectronics, Communications and Renewable Energy (pp. 1-6). IEEE. Apr 2013.
[25] Gowthaman, Naveenbalaji, and Viranjay M. Srivastava. “ual gate material (Au and Pt) based double-gate MOSFET for high-speed devices.” Revista Tecnología en, : ág-10. March 2021.
[26] Gowthaman, N. and Srivastava, V.M., “Parametric analysis of CSDG MOSFET with La 2 O 3 gate oxide: Based on electrical field estimation”, IEEE Access, 9, pp.159421-159431, Dec 2021.
[27] S. A Awan., R.D Gould., “Conductivity and dielectric properties of silicon nitride thin films prepared by RF magnetron sputtering using nitrogen gas”, Thin Solid Films, Volume 423, Issue 2, Pages 267-272, sept 2003
[2] Y. Taur and T. Ning, “Fundamentals of modern VLSI devices,” 2nd ed. Cambridge; New York: Cambridge University Press, 2009.
[3] J. Doe, “Silicon Nitride as a Promising Material for MOSFET Gate Dielectrics,” IEEE Transactions, vol. 10, no. 4, pp. 567-578, 2020.
[4] A. Smith, B. Johnson, and C. Lee, “Challenges of Conventional Gate Dielectric Materials in Advanced MOSFET Technology,” IEEE Transactions, vol. 15, no. 2, pp. 112-123, 2019.
[5] Y. Moon, S. Babu., “Advances in Chemical Mechanical Planarization (CMP)”, Woodhead, 2022,Pages 3-28
[6] Lu, Qiang & Yeo et. Al., “Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric”. Electron Device Letters. 22. 324 - 326. 10.1109/55.930679, 2001).
[7] Mizan, A. M., Nazreen, S. F., Ashraf, S., Kabir, A. Z. M. T., Gomes, J. M., Karmoker, S., Nabil, N. S., & Kabiruzzaman, M., “Study of Different Gate Materials on Performance of Si Based MOSFET”.3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST). 2023.
[8] Chen, W. B., & Chin, A. “High performance of Ge nMOSFETs Using SiO2 interfacial layer and TiLaO gate dielectric.” Ieee Electron Device Letters, 31(1), 80-82. Article 5345768, 2010.
[9] T. Yamashita et al., “Silicon Nitride Gate Insulators for Power MISFETs,” IEEE Transactions on Electron Devices, vol. 39, no. 11, pp. 2568-2575, 1992.
[10] T. Ghani et al., “Silicon Nitride Gate Dielectrics for Sub-100 nm MOSFETs,” IEEE Electron Device Letters, vol. 21, no. 4, pp. 192-194, 2000.
[11] J. W. Klaus et al., “Atomic Layer Deposition of SiO2 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions,” Surface Science, vol. 500, no. 1-3, pp. 876-889, 2002.
[12] K. H. Park et al., “Atomic Layer Deposition of Silicon Nitride Thin Films: A Review,” Journal of Vacuum Science & Technology A, vol. 36, no. 1, pp. 010801, 2018.
[13] S. M. Rossnagel, “Fundamentals of Atomic Layer Deposition: A Perspective on the Chemistry of ALD Precursor Reactions,” Chemical Reviews, vol. 113, no. 4, pp. 8872-8932, 2013.
[14] H. S. P. Wong et al., “Improving Gate Dielectric Properties by Utilizing an Ultrathin Remote Plasma Nitrided Si Interface Layer,” IEEE Transactions on Electron Devices, vol. 45, no. 8, pp. 1651-1658, 1998.
[15] H. Qian et al., “Optimized SiN/SiO2 Gate Stack for Improved Performance and Reliability of 40-nm Poly-Si TFTs,” Electron Devices, vol. 57, no. 12, pp. 3465-3472, 2010.
[16] S. D. Thompson et al., “A Review of MOSFET Threshold Voltage Extraction Methods,” IEEE Transactions on Semiconductor Manufacturing, vol. 21, no. 2, pp. 127-136, 2008.
[17] Smith, J. K., & Johnson, R. L., “Material Engineering and Device Performance of Silicon Nitride Gate Materials for Advanced MOSFETs.” Electronic, 40(6), 845-852, 2015.
[18] Li, H., et al., “Modeling and Simulation of Silicon-Based MOSFETs with Passivated Silicon Nitride Gate Materials.” IEEE Transactions, 65(9), 3872-3879, Feb 2018.
[19] K. S. Park et al., “Improved performance of Silicon-based MOSFETs with Silicon Nitride gate materials,” Journal of Applied Physics, vol. 120, no. 3, Nov 2016
[20] M. Chen et al., “Simulation study on the impact of gate materials on Silicon MOSFET performance,” IEEE Transactions on Electron Devices, vol. 65, no. 7, Aug 2018.
[21] Y. Yorozu, M. Hirano, K. Oka, and Y. Tagawa, “Electron spectroscopy studies on magneto-optical media and plastic substrate interface,” IEEE Transl. J. Magn. Japan, vol. 2, pp. 740–741, August 1987.
[22] M. Young, The Technical Writer’s Handbook. Mill Valley, CA: University Science, 1989.
[23] Sun, Zhongheng, “Comparison and analysis of gate dielectrics for SiC MOSFET”. Applied and Computational Engineering. 23. 223-229. 10.54254/2755-2721/23/20230659, Nov 2023.
[24] Dayal, A., Pandey, S.P., Khandelwal, S. and Akashe, S., “June. Multiple-gate silicon on insulator (SOI) MOSFETs: Device design and analysis”, International Conference on Microelectronics, Communications and Renewable Energy (pp. 1-6). IEEE. Apr 2013.
[25] Gowthaman, Naveenbalaji, and Viranjay M. Srivastava. “ual gate material (Au and Pt) based double-gate MOSFET for high-speed devices.” Revista Tecnología en, : ág-10. March 2021.
[26] Gowthaman, N. and Srivastava, V.M., “Parametric analysis of CSDG MOSFET with La 2 O 3 gate oxide: Based on electrical field estimation”, IEEE Access, 9, pp.159421-159431, Dec 2021.
[27] S. A Awan., R.D Gould., “Conductivity and dielectric properties of silicon nitride thin films prepared by RF magnetron sputtering using nitrogen gas”, Thin Solid Films, Volume 423, Issue 2, Pages 267-272, sept 2003