Comparative Study of Single and Double Barrier GaAs Based Resonant Tunneling Diodes Considering NEGF

Abstract

Growth of pepped up determining demand of final
consumers always forces devices and circuits to increase power
and speed., only resonant tunneling diode can solve this problem
and can be able to take a vital role in many nanoscale
applications. This research paper demonstrates the simulations of
the Resonant Tunneling Diode (RTD) by using Hartree Model for
the single barrier (1B) and the double barrier (2B) Resonant
Tunneling Diodes by the using of NEMO5 considering NEGF. In
addition, switching applications also require Large Peak to
Valley Voltage Ratio (PVVR) to reduce energy loss. In this
article, it is been clearly explained that compared to the Thomas
Fermi Model, Hartree Model improves the Peak to Voltage
Valley Ratio (PVVR) by 21.21%. The results that are found with
the Double Barrier RTD showed much better performance than
the Single Barrier RTD. Furthermore, the I-V characteristic
verified the notable improvement for Hartree model.