Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

Abstract

Gallium nitride (GaN) based metal-oxide
semiconductor field-effect transistors (MOSFETs) are promising
for switching device applications. The doping of n- and p-layers is
varied to evaluate the figure of merits of proposed devices with a
gate length of 10 nm. Devices are switched from OFF-state (gate
voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain
voltage, VDS = 0.75 V. The device with channel doping of 1×1016
cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device
performance due to better control of gate over channel. The ON
current (ION), OFF-current (IOFF), subthreshold swing (SS), drain
induce barrier lowering (DIBL), and delay time are found to be
6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V,
0.035 ps, respectively. These results indicate that GaN-based
MOSFETs are very suitable for the logic switching application in
nanoscale regime.