Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field Effect Transistor

Abstract

We have investigated the performance of Gallium
Nitride (GaN) based Double-Gate (DG) Metal-Oxide
Semiconductor Field-Effect Transistor (MOSFET). Atlas Device
Simulation Framework -Silvaco has been used to access Non
Equilibrium Green Function to distinguish the transfer
characteristics curve, ON state current (ION), OFF-state current
(IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold
Swing, Electron Current Density, Conduction Band Energy and
Electric Field. The concept of Solid state device physics on the
effect of gate length studied for the next generation logic
applications.
GaN-based DG MOSFETs shows better
performance than Si-based Single gate MOSFETs. The proposed
device has drawn the attention over conventional SG-MOSFET
due to fas switching performance. The device turn on and turn
off voltage is respectively VGS=1V(On state) and VGS-0V(OFF
State). To validate our simulation tool and model results,
previous research model has been investigated using Silvaco
Atlas and the results obtained are compared to the previous
results.