Effect of Oxide Thickness on GaN-based Double Gate MOSFETs. AIUB Journal of Science and Engineering, [S. l.], v. 16, n. 2, p. 83 – 88, 2020. DOI: 10.53799/ajse.v16i2.72. Disponível em: https://ajse.aiub.edu/index.php/ajse/article/view/72. Acesso em: 3 may. 2026.