Comparative Study of Single and Double Barrier GaAs/Al0.3Ga0.7As Based Resonant Tunneling Diodes Considering NEGF. AIUB Journal of Science and Engineering, [S. l.], v. 21, n. 3, p. 176–184, 2022. DOI: 10.53799/ajse.v21i3.507. Disponível em: https://ajse.aiub.edu/index.php/ajse/article/view/507. Acesso em: 23 may. 2026.