Islam MR, Hasan MK, Dr. Md. Abdul Mannan, Ali DMT, Hasan MR. Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field Effect Transistor. AJSE [Internet]. 2019 Aug. 31 [cited 2026 Feb. 11];18(2):8. Available from: https://ajse.aiub.edu/index.php/ajse/article/view/157