IslamMd Rabiul, HasanMd Kamrul, MannanMd Abdul, AliM Tanseer, and HasanMd Rokib. “Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor”. AIUB Journal of Science and Engineering (AJSE) 18, no. 2 (August 31, 2019): 73 - 80. Accessed November 28, 2022. https://ajse.aiub.edu/index.php/ajse/article/view/43.