Bin Taher, Md Iktiham, and Md. Tanvir Hasan. “Effects of Doping Concentration on Device Performance of GaN-Based Nano-Regime MOSFETs”. AIUB Journal of Science and Engineering (AJSE) 16, no. 1 (March 31, 2017): 69 - 74. Accessed December 4, 2024. https://ajse.aiub.edu/index.php/ajse/article/view/34.