AHMED, Safayet; HASAN, Md. Tanvir. Effect of Oxide Thickness on GaN-based Double Gate MOSFETs. AIUB Journal of Science and Engineering (AJSE), [S. l.], v. 16, n. 2, p. 6, 2017. DOI: 10.53799/ajse.v16i2.4. Disponível em: https://ajse.aiub.edu/index.php/ajse/article/view/4. Acesso em: 13 apr. 2026.