BIN TAHER, Md Iktiham; HASAN, MD Tanvir. Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs. AIUB Journal of Science and Engineering (AJSE), [S. l.], v. 16, n. 1, p. 6, 2017. Disponível em: https://ajse.aiub.edu/index.php/ajse/article/view/188. Acesso em: 11 feb. 2026.