ISLAM, Md Rabiul; HASAN, Md Kamrul; DR. MD. ABDUL MANNAN; ALI, Dr. M. Tanseer; HASAN, Md Rokib. Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field Effect Transistor. AIUB Journal of Science and Engineering (AJSE), [S. l.], v. 18, n. 2, p. 8, 2019. Disponível em: https://ajse.aiub.edu/index.php/ajse/article/view/157. Acesso em: 11 feb. 2026.