Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor. AIUB Journal of Science and Engineering, [S. l.], v. 18, n. 2, p. 73–80, 2019. DOI: 10.53799/ajse.v18i2.43. Disponível em: https://ajse.aiub.edu/index.php/ajse/article/view/43. Acesso em: 3 may. 2026.