Bin Taher, M.I. and Hasan, M.T. 2017. Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs. AIUB Journal of Science and Engineering (AJSE). 16, 1 (Mar. 2017), 69 - 74. DOI:https://doi.org/10.53799/ajse.v16i1.34.