Temperature Characteristics of Nano-Dimensional FinFET with P Type GaP Semiconductor Channel Based on ION/IOFF and Subthreshold Swing (SS)

Abstract

This study discusses the effects of working temperature on the GaP-FinFET structure. Using the Multi-Gate Field Effect Transistors (MuGFET) simulation tool, the properties of FinFET have been generated over a temperature range of T=0 °C to T=125 °C. First, the structure of P-channel GaP-FinFET with such temperature vary and constant channel Fin parameters are simulated to find their current-voltage characteristics. The higher ΔI at the applied voltage inside the -0.7 to -1 V gate voltage range of the P-channel GaP-FinFET work as a temperature sensor in nano dimensions. The highest ∆I and sensitivity of temperature for P-channel GaP-FinFETs happen at Vg=-1 V, although the SS and ION/IOFF deteriorate as the working temperature rises.