Islam, M. R., M. K. Hasan, M. A. Mannan, M. T. Ali, and M. R. Hasan. “Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor”. AIUB Journal of Science and Engineering (AJSE), Vol. 18, no. 2, Aug. 2019, pp. 73 -80, doi:10.53799/ajse.v18i2.43.